IPB50N12S3L-15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB50N12S3L-15
Código: 3N12L15
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 120 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 44 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 730 pF
Resistencia entre drenaje y fuente RDS(on): 0.0154 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET IPB50N12S3L-15
IPB50N12S3L-15 Datasheet (PDF)
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Isc N-Channel MOSFET Transistor IPB50R299CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
