IPB50N12S3L-15 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPB50N12S3L-15
Маркировка: 3N12L15
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 120 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 44 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 730 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0154 Ohm
Тип корпуса: TO263
Аналог (замена) для IPB50N12S3L-15
IPB50N12S3L-15 Datasheet (PDF)
ipb50n12s3l-15 ipi50n12s3l-15 ipp50n12s3l-15.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPB50N12S3L-15IPI50N12S3L-15, IPP50N12S3L-15OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper
ipb50n10s3l-16 ipi50n10s3l-16 ipp50n10s3l-16 ipp50n10s3l ipb50n10s3l ipi50n10s3l-16.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPB50N10S3L-16IPI50N10S3L-16, IPP50N10S3L-16OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 15.4mDS(on),max I 50 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval
ipb50cn10ng ipd49cn10ng ipi50cn10ng ipp50cn10ng.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1 D S ) 5:3@@7> @AD?3> >7H7> 4 m . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( D n)DS 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE
ipb50r199cp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Isc N-Channel MOSFET Transistor IPB50R199CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb50r299cp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Isc N-Channel MOSFET Transistor IPB50R299CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb50r140cp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Isc N-Channel MOSFET Transistor IPB50R140CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb50r250cp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Isc N-Channel MOSFET Transistor IPB50R250CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .