IPB50N12S3L-15
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB50N12S3L-15
Marking Code: 3N12L15
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 730
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0154
Ohm
Package:
TO263
IPB50N12S3L-15
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB50N12S3L-15
Datasheet (PDF)
..1. Size:404K infineon
ipb50n12s3l-15 ipi50n12s3l-15 ipp50n12s3l-15.pdf
IPB50N12S3L-15IPI50N12S3L-15, IPP50N12S3L-15OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper
7.1. Size:186K infineon
ipb50n10s3l-16 ipi50n10s3l-16 ipp50n10s3l-16 ipp50n10s3l ipb50n10s3l ipi50n10s3l-16.pdf
IPB50N10S3L-16IPI50N10S3L-16, IPP50N10S3L-16OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 15.4mDS(on),max I 50 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval
9.1. Size:902K infineon
ipb50cn10ng ipd49cn10ng ipi50cn10ng ipp50cn10ng.pdf
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9.6. Size:228K inchange semiconductor
ipb50r199cp.pdf
Isc N-Channel MOSFET Transistor IPB50R199CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.7. Size:228K inchange semiconductor
ipb50r299cp.pdf
Isc N-Channel MOSFET Transistor IPB50R299CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.8. Size:228K inchange semiconductor
ipb50r140cp.pdf
Isc N-Channel MOSFET Transistor IPB50R140CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.9. Size:228K inchange semiconductor
ipb50r250cp.pdf
Isc N-Channel MOSFET Transistor IPB50R250CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
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