IPB50N12S3L-15 Specs and Replacement
Type Designator: IPB50N12S3L-15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 730 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0154 Ohm
Package: TO263
IPB50N12S3L-15 substitution
IPB50N12S3L-15 datasheet
ipb50n12s3l-15 ipi50n12s3l-15 ipp50n12s3l-15.pdf
IPB50N12S3L-15 IPI50N12S3L-15, IPP50N12S3L-15 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temper... See More ⇒
ipb50n10s3l-16 ipi50n10s3l-16 ipp50n10s3l-16 ipp50n10s3l ipb50n10s3l ipi50n10s3l-16.pdf
IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 15.4 m DS(on),max I 50 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval... See More ⇒
ipb50cn10ng ipd49cn10ng ipi50cn10ng ipp50cn10ng.pdf
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Detailed specifications: IPB180N10S4-02 , IPB180N10S4-03 , IPB180P04P4-03 , IPB180P04P4L-02 , IPB240N03S4L-R8 , IPB240N04S4-1R0 , IPB240N04S4-R9 , IPB35N10S3L-26 , IRFB4227 , IPB60R040CFD7 , IPB60R045P7 , IPB60R070CFD7 , IPB60R090CFD7 , IPB60R120C7 , IPB60R125CFD7 , IPB60R170CFD7 , IPB60R210CFD7 .
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