IPD95R1K2P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD95R1K2P7
Código: 95R1K2P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 52 W
Voltaje máximo drenador - fuente |Vds|: 950 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 12 pF
Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IPD95R1K2P7
IPD95R1K2P7 Datasheet (PDF)
ipd95r1k2p7.pdf
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ipd95r450p7.pdf
IPD95R450P7MOSFETDPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and C
ipd95r750p7.pdf
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