IPD95R1K2P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD95R1K2P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 12 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO252
IPD95R1K2P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD95R1K2P7 Datasheet (PDF)
ipd95r1k2p7.pdf
IPD95R1K2P7MOSFETDPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and C
ipd95r450p7.pdf
IPD95R450P7MOSFETDPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and C
ipd95r750p7.pdf
IPD95R750P7MOSFETDPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and C
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