IPG20N10S4L-22A Todos los transistores

 

IPG20N10S4L-22A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPG20N10S4L-22A
   Código: 4N10L22
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TDSON-8-10

 Búsqueda de reemplazo de MOSFET IPG20N10S4L-22A

 

IPG20N10S4L-22A Datasheet (PDF)

 ..1. Size:191K  infineon
ipg20n10s4l-22.pdf

IPG20N10S4L-22A
IPG20N10S4L-22A

IPG20N10S4L-22OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N10S4L-22 PG-TDSON-8-4 4N10L22

 0.1. Size:207K  infineon
ipg20n10s4l-22a.pdf

IPG20N10S4L-22A
IPG20N10S4L-22A

IPG20N10S4L-22AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Ty

 2.1. Size:195K  infineon
ipg20n10s4l-35a.pdf

IPG20N10S4L-22A
IPG20N10S4L-22A

IPG20N10S4L-35AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 35mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 4.1. Size:270K  infineon
ipg20n10s4-36a.pdf

IPG20N10S4L-22A
IPG20N10S4L-22A

IPG20N10S4-36AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 36mWID 20 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IPG20N10S4L-22A
  IPG20N10S4L-22A
  IPG20N10S4L-22A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top