All MOSFET. IPG20N10S4L-22A Datasheet

 

IPG20N10S4L-22A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPG20N10S4L-22A
   Marking Code: 4N10L22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TDSON-8-10

 IPG20N10S4L-22A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPG20N10S4L-22A Datasheet (PDF)

 ..1. Size:191K  infineon
ipg20n10s4l-22.pdf

IPG20N10S4L-22A IPG20N10S4L-22A

IPG20N10S4L-22OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N10S4L-22 PG-TDSON-8-4 4N10L22

 0.1. Size:207K  infineon
ipg20n10s4l-22a.pdf

IPG20N10S4L-22A IPG20N10S4L-22A

IPG20N10S4L-22AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Ty

 2.1. Size:195K  infineon
ipg20n10s4l-35a.pdf

IPG20N10S4L-22A IPG20N10S4L-22A

IPG20N10S4L-35AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 35mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 4.1. Size:270K  infineon
ipg20n10s4-36a.pdf

IPG20N10S4L-22A IPG20N10S4L-22A

IPG20N10S4-36AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 36mWID 20 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

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