IPI16CN10NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI16CN10NG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 364 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0162 Ohm
Paquete / Cubierta: TO262
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IPI16CN10NG Datasheet (PDF)
ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf

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ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf

www.DataSheet4U.comIPB16CN10N G IPD16CN10N GIPI16CN10N G IPP16CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 16mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 53 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified
ipi16cn10n.pdf

isc N-Channel MOSFET Transistor IPI16CN10NFEATURESStatic drain-source on-resistance:RDS(on) 16mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Otros transistores... IPI08CN10NG , IPI100N12S3-05 , IPI120N08S4-03 , IPI120N08S4-04 , IPI120N10S4-03 , IPI120N10S4-05 , IPI120P04P4-04 , IPI120P04P4L-03 , STP75NF75 , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 , IPI80P03P4-05 , IPI80P04P4-07 , IPI80P04P4L-04 , IPI80P04P4L-08 , IPL60R060CFD7 .
History: IRHN7130 | MTD20N03HDLT4G | FDD24AN06LA0_F085 | WMS09N06TS | IRFR3704PBF | IPI50N12S3L-15 | IRF7343PBF
History: IRHN7130 | MTD20N03HDLT4G | FDD24AN06LA0_F085 | WMS09N06TS | IRFR3704PBF | IPI50N12S3L-15 | IRF7343PBF



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