IPI16CN10NG Datasheet and Replacement
Type Designator: IPI16CN10NG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 364 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0162 Ohm
Package: TO262
IPI16CN10NG substitution
IPI16CN10NG Datasheet (PDF)
ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf

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ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf

www.DataSheet4U.comIPB16CN10N G IPD16CN10N GIPI16CN10N G IPP16CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 16mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 53 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified
ipi16cn10n.pdf

isc N-Channel MOSFET Transistor IPI16CN10NFEATURESStatic drain-source on-resistance:RDS(on) 16mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Datasheet: IPI08CN10NG , IPI100N12S3-05 , IPI120N08S4-03 , IPI120N08S4-04 , IPI120N10S4-03 , IPI120N10S4-05 , IPI120P04P4-04 , IPI120P04P4L-03 , STP75NF75 , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 , IPI80P03P4-05 , IPI80P04P4-07 , IPI80P04P4L-04 , IPI80P04P4L-08 , IPL60R060CFD7 .
History: 18N10W | WMJ26N65C4 | IXCY01N90E | SM8007NSU | IXFP26N30X3 | UT7317 | IRFP344PBF
Keywords - IPI16CN10NG MOSFET datasheet
IPI16CN10NG cross reference
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IPI16CN10NG replacement
History: 18N10W | WMJ26N65C4 | IXCY01N90E | SM8007NSU | IXFP26N30X3 | UT7317 | IRFP344PBF



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