IPI16CN10NG - параметры транзистора MOSFET, его аналоги, datasheet

IPI16CN10NG Datasheet (PDF)

..1. Size:906K infineon
ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf pdf_icon

$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=D 1 Features D 1 m S ) 5:3@@7> @AD?3> >7H7> . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( DD n)S 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D7

4.1. Size:661K infineon
ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf pdf_icon

www.DataSheet4U.comIPB16CN10N G IPD16CN10N GIPI16CN10N G IPP16CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 16mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 53 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified

4.2. Size:286K inchange semiconductor
ipi16cn10n.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI16CN10NFEATURESStatic drain-source on-resistance:RDS(on) 16mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Другие MOSFET... IPI08CN10NG , IPI100N12S3-05 , IPI120N08S4-03 , IPI120N08S4-04 , IPI120N10S4-03 , IPI120N10S4-05 , IPI120P04P4-04 , IPI120P04P4L-03 , STP75NF75 , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 , IPI80P03P4-05 , IPI80P04P4-07 , IPI80P04P4L-04 , IPI80P04P4L-08 , IPL60R060CFD7 .