STD3N30T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD3N30T4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: DPAK

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STD3N30T4 Datasheet (PDF)

..1. Size:143K 1
std3n30 std3n30-1 std3n30t4.pdf pdf_icon

STD3N30N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3N30 300 V

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STD3N30N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3N30 300 V

9.1. Size:172K 1
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STD3N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3N25 250 V

9.2. Size:172K 1
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STD3NA50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3NA50 500 V

9.3. Size:417K st
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STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

9.4. Size:711K st
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STP4NM60STD3NM60, STD3NM60-1N-channel 600 V, 1.3 , 3 A TO-220, DPAK, IPAKZener-protected MDmesh Power MOSFETFeaturesVDSS RDS(on)Type ID PW(@Tjmax) max31STD3NM60323 A 42 WDPAK1STD3NM60-1 650

9.5. Size:424K st
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STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

9.6. Size:932K st
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STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4STP3NK60Z, STP3NK60ZFPDatasheetN-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packagesFeaturesTABTAB3VDS RDS(on) max. IDOrder codes Package2311D2PAKIPAKTABSTB3NK60ZT4D2PAK2 3TAB1STD3NK60Z-1 IPAKDPAK600 V 3.6 2.4 ASTD3NK60ZT4 DPAK3STP3NK60Z TO

9.7. Size:172K st
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STD3N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3N25 250 V

9.8. Size:725K st
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STD3N62K3, STF3N62K3, STU3N62K3DatasheetN-channel 620 V, 2.2 typ., 2.7 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD3N62K3 2.7 A DPAKSTF3N62K3 620 V 2.5 2.7 A TO-220FPSTU3N62K3 2.7 A IPAKD(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitanceG(1)

9.9. Size:903K st
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STD3NM60NN-channel 600 V, 1.6 , 3.3 A, MDmesh II Power MOSFET in DPAK packageDatasheet preliminary dataFeaturesVDSS RDS(on) Order codes ID@TJmax max.STD3NM60N 650 V

9.10. Size:551K st
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STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V

9.11. Size:705K st
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STP4NM60STD3NM60, STD3NM60-1N-channel 600 V, 1.3 , 3 A TO-220, DPAK, IPAKZener-protected MDmesh Power MOSFETFeaturesVDSS RDS(on)Type ID PW(@Tjmax) max31STD3NM60323 A 42 WDPAK1STD3NM60-1 650

9.12. Size:630K st
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9.13. Size:882K st
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9.14. Size:575K st
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9.15. Size:99K st
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STD3NB50STD3NB50-1N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAKPowerMESH MOSFETPRELIMINARY DATATable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTD3NB50 500 V

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STD3NB50N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAKPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTD3NB50 500 V

9.17. Size:348K st
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STD3NK60ZDN-channel 600 V, 3.3 , 2.4 A, DPAKSuperFREDMesh Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTD3NK60ZD 600 V

9.18. Size:472K st
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STQ3NK50ZR-APSTD3NK50Z - STD3NK50Z-1N-CHANNEL 500V - 2.8 - 2.3A TO-92/DPAK/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTQ3NK50ZR-AP 500 V 3.3 0.5 A 3 WSTD3NK50Z 500 V 3.3 2.3 A 45 WSTD3NK50Z-1 500 V 3.3 2.3 A 45 W3 TYPICAL RDS(on) = 2.8 1 EXTREMELY HIGH dv/dt CAPABILITYDPAKTO-92 (Ammopak)

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9.21. Size:757K st
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STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V

9.22. Size:613K st
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STP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK90Z 900 V

9.23. Size:548K st
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STB3N62K3, STD3N62K3, STF3N62K3STP3N62K3, STU3N62K3N-channel 620 V, 2.2 , 2.7 A SuperMESH3 Power MOSFETD2PAK, DPAK, TO-220FP, TO-220, IPAKFeaturesRDS(on) 33Type VDSS ID PD21max1DPAKSTB3N62K3 620 V

9.24. Size:757K st
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9.25. Size:1357K st
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STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code V R I DS DS(on) max. DSTD3NK80Z-1 800 V 4.5 2.5 A STD3NK80ZT4 800 V 4.5 2.5 A STF3NK80Z 800 V 4.5 2.5 A STP3NK80Z 800 V 4.5 2.5 A Extremely high dv/dt capabil

9.26. Size:880K st
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9.27. Size:170K st
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STD3N30LN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3N30L 300 V

9.28. Size:973K st
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STD3N40K3N-channel 400 V, 2.7 typ., 2 A SuperMESH3 Zener-protected Power MOSFET in a DPAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max ID PwSTD3N40K3 400 V

9.29. Size:472K st
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STD3NM50STD3NM50-1N-CHANNEL 550V @ Tjmax- 2.5 - 3A DPAK/IPAKZener-Protected MDmesh MOSFETTYPE VDSS RDS(on) ID(@Tjmax)STD3NM50 550V

9.31. Size:558K st
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9.32. Size:1589K st
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STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5N-channel 800 V, 2.8 typ., 2.5 A Zener-protected SuperMESH 5Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on)max ID PTOT31STD3N80K5 60 WDPAKSTF3N80K5 20 W3800 V 3.5 2.5 A21TABSTP3N80K560 WTO-220FPSTU3N80K5TAB TO-220 worldwide bes

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STD3NA50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3NA50 500 V

9.34. Size:286K inchange semiconductor
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isc N-Channel MOSFET Transistor STD3NK100ZFEATURESDrain Current : I = 2.5A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 10(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

9.35. Size:207K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor STD3NK60ZT4FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... STD2NA60-1 , STD2NA60T4 , STD3N25-1 , STD3N25T4 , STD3N30-1 , STD3N30L , STD3N30L-1 , STD3N30LT4 , 20N60 , STD3NA50-1 , STD3NA50T4 , STD4N25-1 , STD4N25T4 , STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 .