All MOSFET. STD3N30T4 Datasheet

 

STD3N30T4 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD3N30T4

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 700 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: DPAK

STD3N30T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD3N30T4 Datasheet (PDF)

3.1. std3n30.pdf Size:143K _st

STD3N30T4
STD3N30T4

STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N30 300 V < 1.4 ? 3 A TYPICAL R = 1.1 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK P

5.1. std3na50.pdf Size:172K _st

STD3N30T4
STD3N30T4

STD3NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3NA50 500 V < 3 ? 2.7 A TYPICAL R = 2.4 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK

5.2. std3n25.pdf Size:172K _st

STD3N30T4
STD3N30T4

STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N25 250 V < 2 ? 3 A TYPICAL RDS(on) = 1 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK POWER P

5.3. stf3nk100z stp3nk100z std3nk100z.pdf Size:424K _st

STD3N30T4
STD3N30T4

STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4? - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™ Power MOSFET Features RDS(on) VDSS ID PTOT Type Max STF3NK100Z 1000V < 6? 2.5A 25W 3 3 2 2 1 1 STP3NK100Z 1000V < 6? 2.5A 90W TO-220 TO-220FP STD3NK100Z 1000V < 6? 2.5A 90W ¦ Extremely high dv/dt capability 3 1 ¦ 100% avalanche tested DPAK ¦ Gate charge m

5.4. std3n.pdf Size:170K _st

STD3N30T4
STD3N30T4

STD3N30L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD3N30L 300 V < 1.4 ? 3 A TYPICAL R = 1.15 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK

5.5. std3nb50-1.pdf Size:99K _st

STD3N30T4
STD3N30T4

STD3NB50 STD3NB50-1 N - CHANNEL 500V - 2.5? - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STD3NB50 500 V < 2.8 ? 3 A STD3NB50-1 500 V < 2.8 ? 3 A FEATURES SUMMARY ¦ TYPICAL RDS(on) = 2.5 ? 3 3 ¦ EXTREMELY HIGH dv/dt CAPABILITY 2 1 1 ¦ 100% AVALANCHE TESTED ¦ VERY LOW INTRINSIC CAPACITANCES ¦ GATE CHARGE MINI

5.6. std3nk50z std3nk50z-1 stq3nk50zr-ap.pdf Size:481K _st

STD3N30T4
STD3N30T4

STQ3NK50ZR-AP STD3NK50Z - STD3NK50Z-1 N-CHANNEL 500V - 2.8? - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STQ3NK50ZR-AP 500 V 3.3 ? 0.5 A 3 W STD3NK50Z 500 V 3.3 ? 2.3 A 45 W STD3NK50Z-1 500 V 3.3 ? 2.3 A 45 W 3 TYPICAL RDS(on) = 2.8? 1 EXTREMELY HIGH dv/dt CAPABILITY DPAK TO-92 (Ammopak) ESD IMPROVED

5.7. stb3n62k3 std3n62k3 stf3n62k3 stp3n62k3 stu3n62k3.pdf Size:548K _st

STD3N30T4
STD3N30T4

STB3N62K3, STD3N62K3, STF3N62K3 STP3N62K3, STU3N62K3 N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK Features RDS(on) 3 3 Type VDSS ID PD 2 1 max 1 DPAK STB3N62K3 620 V < 2.5 ? 2.7 A 45 W IPAK STD3N62K3 620 V < 2.5 ? 2.7 A 45 W STF3N62K3 620 V < 2.5 ? 2.7 A(1) 20 W 3 1 STP3N62K3 620 V < 2.5 ? 2.7 A 45 W D?PAK STU3N62K3 620 V < 2.5 ? 2.

5.8. std3nb50.pdf Size:75K _st

STD3N30T4
STD3N30T4

STD3NB50 N - CHANNEL 500V - 2.5? - 3A - IPAK/DPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD3NB50 500 V < 2.8 ? 3 A TYPICAL R = 2.5 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 3 2 100% AVALANCHE TESTED 3 1 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED IPAK DPAK TO-251 TO-252 DESCRIPTION (Suffix "-1") (Suffix "T4") Using the latest high voltage

5.9. stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf Size:757K _st

STD3N30T4
STD3N30T4

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3? - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V < 3.6 ? 2.4 A 45 W STP3NK60ZFP 600 V < 3.6 ? 2.4 A 20 W STB3NK60Z 600 V < 3.6 ? 2.4 A 45 W STD3NK60Z 600 V < 3.6 ? 2.4 A 45 W 3 STD3NK60Z-1 600 V < 3.6 ? 2.4 A 45 W 2 1 TYPICAL RDS(on) = 3.3 ? TO

5.10. std3nk80z std3nk80z-1 stf3nk80z stp3nk80z.pdf Size:882K _st

STD3N30T4
STD3N30T4

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 ?, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V < 4.5 ? 2.5 A 3 2 1 STF3NK80Z 800 V < 4.5 ? 2.5 A TO-220FP TO-220 STD3NK80Z 800 V < 4.5 ? 2.5 A STD3NK80Z-1 800 V < 4.5 ? 2.5 A ¦ Extremely high dv/dt capability 3 3 2 1 ¦ 100% a

5.11. std3nm50.pdf Size:280K _st

STD3N30T4
STD3N30T4

STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5? - 3A DPAK/IPAK Zener-Protected MDmesh™ MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STD3NM50 550V < 3 ? 3A STD3NM50-1 550V < 3 ? 3A TYPICAL RDS(on) = 2.5 ? 3 3 2 HIGH dv/dt AND AVALANCHE CAPABILITIES 1 1 IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE DPAK IPAK TO-252 LOW GATE INPUT RESISTANCE TO-251 TIGHT PROCESS CO

5.12. std3nk60zd.pdf Size:348K _st

STD3N30T4
STD3N30T4

STD3NK60ZD N-channel 600 V, 3.3 ?, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET Features RDS(on) Type VDSS ID max STD3NK60ZD 600 V < 3.6? 2.4 A ¦ 100% avalanche tested 3 ¦ Extremely high dv/dt capability 1 ¦ Gate charge minimized DPAK ¦ Very low intrinsic capacitances ¦ Fast internal recovery diode Application ¦ Switching applications Figure 1. Internal schematic diagram Description

5.13. std3nm60 std3nm60-1 stp4nm60.pdf Size:705K _st

STD3N30T4
STD3N30T4

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 ?, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features VDSS RDS(on) Type ID PW (@Tjmax) max 3 1 STD3NM60 3 2 3 A 42 W DPAK 1 STD3NM60-1 650 < 1.5 ? TO-220 STP4NM60 4 A 69 W 3 2 1 ¦ High dv/dt and avalanche capabilities IPAK ¦ Improved ESD capability ¦ Low input capacitance and gate charge ¦ Low gate input

5.14. stp3nk90z stp3nk90zfp std3nk90z std3nk90z-1.pdf Size:613K _st

STD3N30T4
STD3N30T4

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V < 4.8 ? 3 A 90 W STP3NK90ZFP 900 V < 4.8 ? 3 A 25 W STD3NK90Z 900 V < 4.8 ? 3 A 90 W STD3NK90Z-1 900 V < 4.8 ? 3 A 90 W 3 TYPICAL RDS(on) = 4.1 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100%

Datasheet: STD2NA60-1 , STD2NA60T4 , STD3N25-1 , STD3N25T4 , STD3N30-1 , STD3N30L , STD3N30L-1 , STD3N30LT4 , IRF840 , STD3NA50-1 , STD3NA50T4 , STD4N25-1 , STD4N25T4 , STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 .

 


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