IPN50R1K4CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPN50R1K4CE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: SOT223

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IPN50R1K4CE datasheet

 ..1. Size:1300K  infineon
 ipn50r1k4ce.pdf pdf_icon

IPN50R1K4CE

IPN50R1K4CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 8.1. Size:1272K  infineon
 ipn50r650ce.pdf pdf_icon

IPN50R1K4CE

IPN50R650CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 8.2. Size:1289K  infineon
 ipn50r800ce.pdf pdf_icon

IPN50R1K4CE

IPN50R800CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 8.3. Size:1310K  infineon
 ipn50r3k0ce.pdf pdf_icon

IPN50R1K4CE

IPN50R3K0CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

MOSTRAR MÁS

Otros transistores... IPL60R125P7, IPL60R160CFD7, IPL60R185C7, IPL60R185P7, IPL60R225CFD7, IPLU250N04S4-1R7, IPLU300N04S4-1R1, IPLU300N04S4-R8, 5N65, IPN50R3K0CE, IPN50R650CE, IPN50R800CE, IPN60R1K0PFD7S, IPN60R1K5CE, IPN60R2K0PFD7S, IPN60R360P7S, IPN60R360PFD7S