IPN50R1K4CE MOSFET. Datasheet pdf. Equivalent

   Type Designator: IPN50R1K4CE
   Marking Code: 50S1K4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT223

IPN50R1K4CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS