IPN50R1K4CE MOSFET. Datasheet pdf. Equivalent
Type Designator: IPN50R1K4CE
Marking Code: 50S1K4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.2 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 11 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: SOT223
IPN50R1K4CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPN50R1K4CE Datasheet (PDF)
ipn50r1k4ce.pdf
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ipn50r800ce.pdf
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ipn50r3k0ce.pdf
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