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IPN50R1K4CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPN50R1K4CE
   Маркировка: 50S1K4
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 5 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 4.8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 8.2 nC
   Время нарастания (tr): 6 ns
   Выходная емкость (Cd): 11 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для IPN50R1K4CE

 

 

IPN50R1K4CE Datasheet (PDF)

 ..1. Size:1300K  infineon
 ipn50r1k4ce.pdf

IPN50R1K4CE IPN50R1K4CE

IPN50R1K4CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.1. Size:1272K  infineon
 ipn50r650ce.pdf

IPN50R1K4CE IPN50R1K4CE

IPN50R650CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.2. Size:1289K  infineon
 ipn50r800ce.pdf

IPN50R1K4CE IPN50R1K4CE

IPN50R800CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.3. Size:1310K  infineon
 ipn50r3k0ce.pdf

IPN50R1K4CE IPN50R1K4CE

IPN50R3K0CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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