IPS70R600P7S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPS70R600P7S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO251

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IPS70R600P7S datasheet

 ..1. Size:920K  infineon
ips70r600p7s.pdf pdf_icon

IPS70R600P7S

IPS70R600P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

 8.1. Size:1168K  infineon
ips70r1k4p7s.pdf pdf_icon

IPS70R600P7S

IPS70R1K4P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

 8.2. Size:1056K  infineon
ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPS70R600P7S

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh

 8.3. Size:926K  infineon
ips70r360p7s.pdf pdf_icon

IPS70R600P7S

IPS70R360P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

Otros transistores... IPS60R1K0PFD7S, IPS60R210PFD7S, IPS60R280PFD7S, IPS60R2K1CE, IPS60R360PFD7S, IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S, IRLZ44N, IPS70R900P7S, IPS80R1K2P7, IPS80R1K4P7, IPS80R2K0P7, IPS80R2K4P7, IPS80R600P7, IPS80R750P7, IPS80R900P7