IPS70R600P7S datasheet, аналоги, основные параметры

Наименование производителя: IPS70R600P7S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 43.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.5 ns

Cossⓘ - Выходная емкость: 7 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO251

Аналог (замена) для IPS70R600P7S

- подборⓘ MOSFET транзистора по параметрам

 

IPS70R600P7S даташит

 ..1. Size:920K  infineon
 ips70r600p7s.pdf pdf_icon

IPS70R600P7S

IPS70R600P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

 8.1. Size:1168K  infineon
 ips70r1k4p7s.pdf pdf_icon

IPS70R600P7S

IPS70R1K4P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

 8.2. Size:1056K  infineon
 ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPS70R600P7S

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh

 8.3. Size:926K  infineon
 ips70r360p7s.pdf pdf_icon

IPS70R600P7S

IPS70R360P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

ПОКАЗАТЬ ЕЩЁ

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