Справочник MOSFET. IPS70R600P7S

 

IPS70R600P7S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPS70R600P7S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 43.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 7 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

IPS70R600P7S Datasheet (PDF)

 ..1. Size:920K  infineon
 ips70r600p7s.pdf pdf_icon

IPS70R600P7S

IPS70R600P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

 8.1. Size:1168K  infineon
 ips70r1k4p7s.pdf pdf_icon

IPS70R600P7S

IPS70R1K4P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

 8.2. Size:1056K  infineon
 ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPS70R600P7S

IPD70R1K4CE, IPS70R1K4CEMOSFETDPAK IPAK SL700V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

 8.3. Size:926K  infineon
 ips70r360p7s.pdf pdf_icon

IPS70R600P7S

IPS70R360P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

 

 
Back to Top

 


 
.