All MOSFET. IPS70R600P7S Datasheet

 

IPS70R600P7S Datasheet and Replacement


   Type Designator: IPS70R600P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251
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IPS70R600P7S Datasheet (PDF)

 ..1. Size:920K  infineon
 ips70r600p7s.pdf pdf_icon

IPS70R600P7S

IPS70R600P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

 8.1. Size:1168K  infineon
 ips70r1k4p7s.pdf pdf_icon

IPS70R600P7S

IPS70R1K4P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

 8.2. Size:1056K  infineon
 ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPS70R600P7S

IPD70R1K4CE, IPS70R1K4CEMOSFETDPAK IPAK SL700V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

 8.3. Size:926K  infineon
 ips70r360p7s.pdf pdf_icon

IPS70R600P7S

IPS70R360P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

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Keywords - IPS70R600P7S MOSFET datasheet

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