IPS80R900P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS80R900P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 6 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Paquete / Cubierta: TO251
- Selección de transistores por parámetros
IPS80R900P7 Datasheet (PDF)
ips80r900p7.pdf

IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k4p7.pdf

IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k2p7.pdf

IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k0p7.pdf

IPS80R2K0P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PV563BA | IXTV230N85TS | STF34N65M5 | SHD219405 | IRFM1310ST | SSPL1090 | STI360N4F6
History: PV563BA | IXTV230N85TS | STF34N65M5 | SHD219405 | IRFM1310ST | SSPL1090 | STI360N4F6



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