IPS80R900P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS80R900P7
Código: 80R900P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 6 pF
Resistencia entre drenaje y fuente RDS(on): 0.9 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET IPS80R900P7
IPS80R900P7 Datasheet (PDF)
ips80r900p7.pdf
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ips80r1k2p7.pdf
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ips80r2k0p7.pdf
IPS80R2K0P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k4p7.pdf
IPS80R1K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r750p7.pdf
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ips80r600p7.pdf
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