All MOSFET. IPS80R900P7 Datasheet

 

IPS80R900P7 Datasheet and Replacement


   Type Designator: IPS80R900P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO251
 

 IPS80R900P7 substitution

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IPS80R900P7 Datasheet (PDF)

 ..1. Size:951K  infineon
 ips80r900p7.pdf pdf_icon

IPS80R900P7

IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.1. Size:950K  infineon
 ips80r2k4p7.pdf pdf_icon

IPS80R900P7

IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.2. Size:962K  infineon
 ips80r1k2p7.pdf pdf_icon

IPS80R900P7

IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.3. Size:954K  infineon
 ips80r2k0p7.pdf pdf_icon

IPS80R900P7

IPS80R2K0P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

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Datasheet: IPS70R600P7S , IPS70R900P7S , IPS80R1K2P7 , IPS80R1K4P7 , IPS80R2K0P7 , IPS80R2K4P7 , IPS80R600P7 , IPS80R750P7 , IRFB4110 , IPSA70R1K2P7S , IPSA70R1K4CE , IPSA70R1K4P7S , IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S .

History: STR2N2VH5

Keywords - IPS80R900P7 MOSFET datasheet

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