IPS80R900P7 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPS80R900P7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 6 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
Тип корпуса: TO251
Аналог (замена) для IPS80R900P7
IPS80R900P7 Datasheet (PDF)
ips80r900p7.pdf

IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k4p7.pdf

IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k2p7.pdf

IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k0p7.pdf

IPS80R2K0P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
Другие MOSFET... IPS70R600P7S , IPS70R900P7S , IPS80R1K2P7 , IPS80R1K4P7 , IPS80R2K0P7 , IPS80R2K4P7 , IPS80R600P7 , IPS80R750P7 , IRFB4110 , IPSA70R1K2P7S , IPSA70R1K4CE , IPSA70R1K4P7S , IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S .
History: DAC040N120Z5 | SI2307DS
History: DAC040N120Z5 | SI2307DS



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