IPT60R102G7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPT60R102G7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 141 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.102 Ohm
   Paquete / Cubierta: HSOF-8

Búsqueda de reemplazo de MOSFET IPT60R102G7

IPT60R102G7 Datasheet (PDF)

..1. Size:961K infineon
ipt60r102g7.pdf

IPT60R102G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go

7.1. Size:994K infineon
ipt60r150g7.pdf

IPT60R150G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go

8.1. Size:1085K infineon
ipt60r040s7.pdf

IPT60R040S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R040S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r

8.2. Size:997K infineon
ipt60r050g7.pdf

IPT60R050G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go

8.3. Size:1077K infineon
ipt60r065s7.pdf

IPT60R065S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R065S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r

8.4. Size:992K infineon
ipt60r028g7.pdf

IPT60R028G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go

8.5. Size:1094K infineon
ipt60r022s7.pdf

IPT60R022S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R022S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZXM66P02N8 | ZVP0545GTC

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