IPT60R102G7 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPT60R102G7
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 141 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 27 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.102 Ohm
Тип корпуса: HSOF-8
- подбор MOSFET транзистора по параметрам
IPT60R102G7 Datasheet (PDF)
ipt60r102g7.pdf

IPT60R102G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go
ipt60r150g7.pdf

IPT60R150G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go
ipt60r040s7.pdf

IPT60R040S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R040S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r
ipt60r050g7.pdf

IPT60R050G7MOSFETHSOF600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits ofthe C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability andTabthe improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3kW123Features45678 C7 Go
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FDD45AN06LA0F085 | SSM3J312T | 4N80G-T2Q-T | RFD8P05 | AP2906EY | OSS60R099HF | STN8882D
History: FDD45AN06LA0F085 | SSM3J312T | 4N80G-T2Q-T | RFD8P05 | AP2906EY | OSS60R099HF | STN8882D



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
bd243 | 2sk170 datasheet | 2n7000 equivalent | tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220