IPT60R102G7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPT60R102G7
Marking Code: 60R102G7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 141 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 27 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
Package: HSOF-8
IPT60R102G7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPT60R102G7 Datasheet (PDF)
ipt60r102g7.pdf
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ipt60r150g7.pdf
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ipt60r040s7.pdf
IPT60R040S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R040S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r
ipt60r050g7.pdf
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ipt60r065s7.pdf
IPT60R065S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R065S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r
ipt60r028g7.pdf
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ipt60r022s7.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFK24N100F
History: IXFK24N100F
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