IPZ60R060C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPZ60R060C7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 162 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 54 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO247-4
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Otros transistores... IPW60R180P7 , IPW80R280P7 , IPW80R290C3A , IPW80R360P7 , IPZ40N04S5-3R1 , IPZ40N04S5-5R4 , IPZ40N04S5-8R4 , IPZ40N04S5L-7R4 , STF13NM60N , IPZ60R070P6 , IPZA60R037P7 , IPZA60R045P7 , IPZA60R060P7 , IPZA60R080P7 , IPZA60R120P7 , IPZA60R180P7 , IQE006NE2LM5 .
History: AM8N25-550D | HUF75637S3ST | FRL234R | HUF75531SK8T | AM90N06-15P | BL2N60-D | P1003BK
History: AM8N25-550D | HUF75637S3ST | FRL234R | HUF75531SK8T | AM90N06-15P | BL2N60-D | P1003BK



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