IPZ60R060C7 Datasheet. Specs and Replacement
Type Designator: IPZ60R060C7 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 162 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO247-4
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IPZ60R060C7 substitution
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IPZ60R060C7 datasheet
ipz60r060c7.pdf
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ipz60r099c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R099C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a... See More ⇒
ipz60r040c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R040C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a... See More ⇒
Detailed specifications: IPW60R180P7, IPW80R280P7, IPW80R290C3A, IPW80R360P7, IPZ40N04S5-3R1, IPZ40N04S5-5R4, IPZ40N04S5-8R4, IPZ40N04S5L-7R4, K3569, IPZ60R070P6, IPZA60R037P7, IPZA60R045P7, IPZA60R060P7, IPZA60R080P7, IPZA60R120P7, IPZA60R180P7, IQE006NE2LM5
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