IRF135SA204 Todos los transistores

 

IRF135SA204 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF135SA204

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 135 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm

Encapsulados: D2PAK-7

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IRF135SA204 datasheet

 ..1. Size:515K  infineon
irf135sa204.pdf pdf_icon

IRF135SA204

StrongIRFET IRF135SA204 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 4.7m Synchronous rectifier applications G max 5.9m Resonant mode power supplies S OR-ing and redunda

 7.1. Size:546K  international rectifier
irf135s203 irf135b203.pdf pdf_icon

IRF135SA204

StrongIRFET IRF135B203 IRF135S203 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 6.7m Synchronous rectifier applications G max 8.4m Resonant mode power supplies S OR-ing

 7.2. Size:258K  inchange semiconductor
irf135s203.pdf pdf_icon

IRF135SA204

isc N-Channel MOSFET Transistor IRF135S203 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:245K  inchange semiconductor
irf135b203.pdf pdf_icon

IRF135SA204

isc N-Channel MOSFET Transistor IRF135B203 IIRF135B203 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

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History: TK8P60W5

 

 

 

 

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