IRF135SA204
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF135SA204
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 500
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 135
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 160
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 210
nC
trⓘ - Rise Time: 56
nS
Cossⓘ -
Output Capacitance: 650
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059
Ohm
Package: D2PAK-7
IRF135SA204
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF135SA204
Datasheet (PDF)
..1. Size:515K infineon
irf135sa204.pdf
StrongIRFET IRF135SA204 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 4.7m Synchronous rectifier applications G max 5.9m Resonant mode power supplies S OR-ing and redunda
7.1. Size:546K international rectifier
irf135s203 irf135b203.pdf
StrongIRFET IRF135B203 IRF135S203 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 135V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 6.7m Synchronous rectifier applications G max 8.4m Resonant mode power supplies S OR-ing
7.2. Size:258K inchange semiconductor
irf135s203.pdf
isc N-Channel MOSFET Transistor IRF135S203FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
8.1. Size:245K inchange semiconductor
irf135b203.pdf
isc N-Channel MOSFET Transistor IRF135B203IIRF135B203FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved Gate, Avalanche and Dynamic dV/dt RuggednessABSOLUTE MAXIMUM RATINGS(T =25)aS
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