ME15N10-G Todos los transistores

 

ME15N10-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME15N10-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 57 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO252
 

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ME15N10-G Datasheet (PDF)

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ME15N10-G

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is

 7.1. Size:995K  matsuki electric
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ME15N10-G

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is

 7.2. Size:847K  cn vbsemi
 me15n10.pdf pdf_icon

ME15N10-G

ME15N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

 9.1. Size:1022K  matsuki electric
 me15n25f me15n25f-g.pdf pdf_icon

ME15N10-G

ME15N25F/ME15N25F-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)220m@VGS=10V The ME15N25F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

MOSTRAR MÁS

Otros transistores... ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , ME12P04-G , 75N75 , ME20N03 , ME20N03-G , ME20N15 , ME20N15-G , ME20P03 , ME20P03-G , ME20P06 , ME20P06-G .

History: PTW90N20 | ASDM65N18S | SFG019N100C3

 

 
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