ME15N10-G PDF and Equivalents Search

 

ME15N10-G Specs and Replacement

Type Designator: ME15N10-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO252

ME15N10-G substitution

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ME15N10-G datasheet

 ..1. Size:1197K  matsuki electric
 me15n10 me15n10-g.pdf pdf_icon

ME15N10-G

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is ... See More ⇒

 7.1. Size:995K  matsuki electric
 me15n10 me15n10g.pdf pdf_icon

ME15N10-G

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is ... See More ⇒

 7.2. Size:847K  cn vbsemi
 me15n10.pdf pdf_icon

ME15N10-G

ME15N10 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (... See More ⇒

 9.1. Size:1022K  matsuki electric
 me15n25f me15n25f-g.pdf pdf_icon

ME15N10-G

ME15N25F/ME15N25F-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 220m @VGS=10V The ME15N25F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process ... See More ⇒

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Detailed specifications: ME120N10T, ME120N10T-G, ME12N04, ME12N04-G, ME12N15, ME12N15-G, ME12P04, ME12P04-G, 18N50, ME20N03, ME20N03-G, ME20N15, ME20N15-G, ME20P03, ME20P03-G, ME20P06, ME20P06-G

Keywords - ME15N10-G MOSFET specs

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