Справочник MOSFET. ME15N10-G

 

ME15N10-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ME15N10-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 57 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для ME15N10-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

ME15N10-G Datasheet (PDF)

 ..1. Size:1197K  matsuki electric
 me15n10 me15n10-g.pdf pdf_icon

ME15N10-G

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is

 7.1. Size:995K  matsuki electric
 me15n10 me15n10g.pdf pdf_icon

ME15N10-G

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is

 7.2. Size:847K  cn vbsemi
 me15n10.pdf pdf_icon

ME15N10-G

ME15N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

 9.1. Size:1022K  matsuki electric
 me15n25f me15n25f-g.pdf pdf_icon

ME15N10-G

ME15N25F/ME15N25F-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)220m@VGS=10V The ME15N25F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , ME12P04-G , 75N75 , ME20N03 , ME20N03-G , ME20N15 , ME20N15-G , ME20P03 , ME20P03-G , ME20P06 , ME20P06-G .

History: IRLML2402PBF-1 | ASDM30P11TD | PSMN7R5-30MLD | AOD2810 | IRF8306MTRPBF | NCEP025N60G | FQPF13N50CSDTU

 

 
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