IRF7314PBF Todos los transistores

 ..1. Size:195K  international rectifier
 irf7314pbf.pdf

PD - 95181 IRF7314PbF HEXFET Power MOSFET l Generation V Technology 1 8 S1 D1 l Ultra Low On-Resistance VDSS = -20V 2 7 l Dual P-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 7.1. Size:148K  international rectifier
 irf7314q.pdf

 7.2. Size:147K  international rectifier
 irf7314.pdf

PD - 9.1436B IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V 2 7 Dual P-Channel MOSFET G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 7.3. Size:909K  cn vbsemi
 irf7314trpbf.pdf

IRF7314TRPBF www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top