IRF7314PBF Specs and Replacement
Type Designator: IRF7314PBF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 470 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SO-8
IRF7314PBF substitution
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IRF7314PBF datasheet
irf7314pbf.pdf
PD - 95181 IRF7314PbF HEXFET Power MOSFET l Generation V Technology 1 8 S1 D1 l Ultra Low On-Resistance VDSS = -20V 2 7 l Dual P-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒
irf7314.pdf
PD - 9.1436B IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V 2 7 Dual P-Channel MOSFET G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒
irf7314trpbf.pdf
IRF7314TRPBF www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top... See More ⇒
Detailed specifications: ME2301-G , IRF7303PBF , IRF7304PBF , IRF7306PBF , IRF7307PBF , IRF7309TRPBF-1 , IRF7311PBF , IRF7313PBF , IRLB3034 , IRF7316PBF , IRF7317PBF , IRF7319PBF , IRF7324PBF , IRF7328PBF , IRF7329PBF , IRF7331PBF , IRF7341PBF .
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