IRF7319PBF Todos los transistores

 ..1. Size:224K  international rectifier
 irf7319pbf.pdf

PD - 95267 IRF7319PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifi

 7.1. Size:365K  1
 auirf7319q.pdf

AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 VDSS 30V -30V Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.042 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.029 0.058 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 6.5A -4.9A Fully Avalanch

 7.2. Size:137K  international rectifier
 irf7319.pdf

PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifi

 7.3. Size:892K  cn vbsemi
 irf7319tr.pdf

IRF7319TR www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG