All MOSFET. IRF7319PBF Datasheet

 

IRF7319PBF Datasheet and Replacement


   Type Designator: IRF7319PBF
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO-8
 

 IRF7319PBF substitution

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IRF7319PBF Datasheet (PDF)

 ..1. Size:224K  international rectifier
irf7319pbf.pdf pdf_icon

IRF7319PBF

PD - 95267IRF7319PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45l Lead-Free G2 D2P-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifi

 7.1. Size:365K  1
auirf7319q.pdf pdf_icon

IRF7319PBF

AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 30V -30V Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.0423 6S2 D2 Dual N and P Channel MOSFET max. 0.029 0.05845G2 D2 Surface Mount P-CHANNEL MOSFETID 6.5A -4.9A Fully Avalanch

 7.2. Size:137K  international rectifier
irf7319.pdf pdf_icon

IRF7319PBF

PD - 9.1606AIRF7319PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE TN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET 2 7G1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-C H ANN EL MO SFE TRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifi

 7.3. Size:892K  cn vbsemi
irf7319tr.pdf pdf_icon

IRF7319PBF

IRF7319TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

Datasheet: IRF7306PBF , IRF7307PBF , IRF7309TRPBF-1 , IRF7311PBF , IRF7313PBF , IRF7314PBF , IRF7316PBF , IRF7317PBF , EMB04N03H , IRF7324PBF , IRF7328PBF , IRF7329PBF , IRF7331PBF , IRF7341PBF , IRF7342PBF , IRF7343PBF , IRF7379PBF .

History: WMQ048NV6LG4 | IRLZ34SPBF

Keywords - IRF7319PBF MOSFET datasheet

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