IRF9520NPBF Todos los transistores

 

IRF9520NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9520NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO-220AB
 

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IRF9520NPBF Datasheet (PDF)

 ..1. Size:160K  international rectifier
 irf9520npbf.pdf pdf_icon

IRF9520NPBF

PD - 95411IRF9520NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.48l P-ChannelGl Fully Avalanche RatedID = -6.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-res

 6.1. Size:155K  international rectifier
 irf9520ns.pdf pdf_icon

IRF9520NPBF

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 6.2. Size:155K  international rectifier
 irf9520nl.pdf pdf_icon

IRF9520NPBF

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 6.3. Size:95K  international rectifier
 irf9520n.pdf pdf_icon

IRF9520NPBF

PD - 91521AIRF9520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -6.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

MOSTRAR MÁS

Otros transistores... IRF7807ATRPBF-1 , IRF7807TRPBF-1 , IRF7807VTRPBF-1 , IRF7946TRPBF , IRF8010LPBF , IRF8301MTRPBF , IRF9389PBF , IRF9410PBf , P55NF06 , IRF9530NLPBF , IRF9910PBF , IRF9952PBF , IRF9953PBF , IRF9956PBF , IRFB4410PBF , IRFB7430PBF , IRFB7434PBF .

History: IRF8301MTRPBF

 

 
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