IRF9520NPBF Todos los transistores

 

IRF9520NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9520NPBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO-220AB

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IRF9520NPBF datasheet

 ..1. Size:160K  international rectifier
 irf9520npbf.pdf pdf_icon

IRF9520NPBF

PD - 95411 IRF9520NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.48 l P-Channel G l Fully Avalanche Rated ID = -6.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

 6.1. Size:155K  international rectifier
 irf9520ns.pdf pdf_icon

IRF9520NPBF

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 6.2. Size:155K  international rectifier
 irf9520nl.pdf pdf_icon

IRF9520NPBF

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 6.3. Size:95K  international rectifier
 irf9520n.pdf pdf_icon

IRF9520NPBF

PD - 91521A IRF9520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.48 P-Channel G Fully Avalanche Rated ID = -6.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

MOSTRAR MÁS

Otros transistores... IRF7807ATRPBF-1 , IRF7807TRPBF-1 , IRF7807VTRPBF-1 , IRF7946TRPBF , IRF8010LPBF , IRF8301MTRPBF , IRF9389PBF , IRF9410PBf , AON6414A , IRF9530NLPBF , IRF9910PBF , IRF9952PBF , IRF9953PBF , IRF9956PBF , IRFB4410PBF , IRFB7430PBF , IRFB7434PBF .

History: IRFB7430PBF

 

 

 


 
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