IRF9520NPBF Datasheet. Specs and Replacement

Type Designator: IRF9520NPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO-220AB

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IRF9520NPBF substitution

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IRF9520NPBF datasheet

 ..1. Size:160K  international rectifier
 irf9520npbf.pdf pdf_icon

IRF9520NPBF

PD - 95411 IRF9520NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.48 l P-Channel G l Fully Avalanche Rated ID = -6.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res... See More ⇒

 6.1. Size:155K  international rectifier
 irf9520ns.pdf pdf_icon

IRF9520NPBF

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒

 6.2. Size:155K  international rectifier
 irf9520nl.pdf pdf_icon

IRF9520NPBF

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒

 6.3. Size:95K  international rectifier
 irf9520n.pdf pdf_icon

IRF9520NPBF

PD - 91521A IRF9520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.48 P-Channel G Fully Avalanche Rated ID = -6.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

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Detailed specifications: IRF7807ATRPBF-1, IRF7807TRPBF-1, IRF7807VTRPBF-1, IRF7946TRPBF, IRF8010LPBF, IRF8301MTRPBF, IRF9389PBF, IRF9410PBf, 10N60, IRF9530NLPBF, IRF9910PBF, IRF9952PBF, IRF9953PBF, IRF9956PBF, IRFB4410PBF, IRFB7430PBF, IRFB7434PBF

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