IRF9520NPBF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF9520NPBF
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 47 ns
Cossⓘ - Выходная емкость: 110 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm
Тип корпуса: TO-220AB
- подбор MOSFET транзистора по параметрам
IRF9520NPBF Datasheet (PDF)
irf9520npbf.pdf

PD - 95411IRF9520NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.48l P-ChannelGl Fully Avalanche RatedID = -6.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-res
irf9520ns.pdf

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve
irf9520nl.pdf

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve
irf9520n.pdf

PD - 91521AIRF9520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -6.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SFG180N10KF | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2
History: SFG180N10KF | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2



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