IRFB7440PBF Todos los transistores

 

IRFB7440PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB7440PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 172 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB7440PBF Datasheet (PDF)

 ..1. Size:253K  infineon
irfb7440pbf.pdf

IRFB7440PBF
IRFB7440PBF

StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw

 6.1. Size:253K  international rectifier
irfb7440.pdf

IRFB7440PBF
IRFB7440PBF

StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw

 6.2. Size:246K  inchange semiconductor
irfb7440.pdf

IRFB7440PBF
IRFB7440PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7440 IIRFB7440FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 7.1. Size:541K  international rectifier
irfb7446g.pdf

IRFB7440PBF
IRFB7440PBF

StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power sup

 7.2. Size:543K  international rectifier
irfb7446.pdf

IRFB7440PBF
IRFB7440PBF

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 7.3. Size:543K  infineon
irfb7446pbf.pdf

IRFB7440PBF
IRFB7440PBF

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 7.4. Size:245K  inchange semiconductor
irfb7446.pdf

IRFB7440PBF
IRFB7440PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7446IIRFB7446FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLS60R360-D | NCE6080AK

 

 
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History: BLS60R360-D | NCE6080AK

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