IRFB7440PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB7440PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 143 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 172 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.9 V
Carga de la puerta (Qg): 90 nC
Tiempo de subida (tr): 68 nS
Conductancia de drenaje-sustrato (Cd): 680 pF
Resistencia entre drenaje y fuente RDS(on): 0.0025 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET IRFB7440PBF
IRFB7440PBF Datasheet (PDF)
irfb7440pbf.pdf
StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw
irfb7440.pdf
StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw
irfb7440.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7440 IIRFB7440FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU
irfb7446g.pdf
StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power sup
irfb7446.pdf
StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp
irfb7446pbf.pdf
StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp
irfb7446.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7446IIRFB7446FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
