IRFB7440PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB7440PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 143
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 172
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 90
nC
trⓘ - Rise Time: 68
nS
Cossⓘ -
Output Capacitance: 680
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025
Ohm
Package:
TO-220AB
IRFB7440PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB7440PBF
Datasheet (PDF)
..1. Size:253K infineon
irfb7440pbf.pdf 
StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw
6.1. Size:253K international rectifier
irfb7440.pdf
StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw
6.2. Size:246K inchange semiconductor
irfb7440.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7440 IIRFB7440FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU
7.1. Size:541K international rectifier
irfb7446g.pdf
StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power sup
7.2. Size:543K international rectifier
irfb7446.pdf
StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp
7.3. Size:543K infineon
irfb7446pbf.pdf
StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp
7.4. Size:245K inchange semiconductor
irfb7446.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7446IIRFB7446FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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