Справочник MOSFET. IRFB7440PBF

 

IRFB7440PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB7440PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 143 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 172 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 90 nC
   trⓘ - Время нарастания: 68 ns
   Cossⓘ - Выходная емкость: 680 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB7440PBF

 

 

IRFB7440PBF Datasheet (PDF)

 ..1. Size:253K  infineon
 irfb7440pbf.pdf

IRFB7440PBF IRFB7440PBF

StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw

 6.1. Size:253K  international rectifier
 irfb7440.pdf

IRFB7440PBF IRFB7440PBF

StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw

 6.2. Size:246K  inchange semiconductor
 irfb7440.pdf

IRFB7440PBF IRFB7440PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7440 IIRFB7440FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 7.1. Size:541K  international rectifier
 irfb7446g.pdf

IRFB7440PBF IRFB7440PBF

StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power sup

 7.2. Size:543K  international rectifier
 irfb7446.pdf

IRFB7440PBF IRFB7440PBF

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 7.3. Size:543K  infineon
 irfb7446pbf.pdf

IRFB7440PBF IRFB7440PBF

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 7.4. Size:245K  inchange semiconductor
 irfb7446.pdf

IRFB7440PBF IRFB7440PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7446IIRFB7446FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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