IRFS31N20DP Todos los transistores

 ..1. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 0.1. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 4.1. Size:190K  international rectifier
 irfs31n20d.pdf

PD- 93805B IRFB31N20D IRFS31N20D SMPS MOSFET IRFSL31N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche

 4.2. Size:258K  inchange semiconductor
 irfs31n20d.pdf

Isc N-Channel MOSFET Transistor IRFS31N20D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo