IRFS31N20DP PDF and Equivalents Search

 

IRFS31N20DP Specs and Replacement

Type Designator: IRFS31N20DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO263

IRFS31N20DP substitution

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IRFS31N20DP datasheet

 ..1. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf pdf_icon

IRFS31N20DP

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒

 0.1. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf pdf_icon

IRFS31N20DP

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒

 4.1. Size:190K  international rectifier
 irfs31n20d.pdf pdf_icon

IRFS31N20DP

PD- 93805B IRFB31N20D IRFS31N20D SMPS MOSFET IRFSL31N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche ... See More ⇒

 4.2. Size:258K  inchange semiconductor
 irfs31n20d.pdf pdf_icon

IRFS31N20DP

Isc N-Channel MOSFET Transistor IRFS31N20D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

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Detailed specifications: IRFH8324PBF , IRFHM792PBF , IRFHM8326PBF , IRFHM8329PBF , IRFI7446GPBF , IRFP140NPBF , IRFR3707ZPBF , IRFS23N15DPBF , 5N60 , IRFSL23N20DPBF , IRFSL31N20DP , IRFSL33N15DPBF , IRFSL41N15DPBF , IRFSL52N15DPBF , IRFSL59N10DPBF , IRFU18N15DPBF , IRFU2407PBF .

History: FHP3710C | FHP150N03A | IRFS23N15DPBF

Keywords - IRFS31N20DP MOSFET specs

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