ME2308S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME2308S-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.04 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET ME2308S-G

ME2308S-G Datasheet (PDF)

..1. Size:1540K matsuki electric
me2308s me2308s-g.pdf

ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

7.1. Size:850K cn vbsemi
me2308s.pdf

ME2308Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

8.1. Size:921K matsuki electric
me2308d me2308d-g.pdf

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON)60m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)70m@VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)100m@VGS=2.5V minimize

8.2. Size:830K matsuki electric
me2308dn-g.pdf

ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD ProtectionGENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5Vtrench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8Vmini

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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