ME2308S-G - аналоги, параметры транзистора - Справочник транзисторов

ME2308S-G даташит

..1. Size:1540K matsuki electric
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ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

7.1. Size:850K cn vbsemi
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ME2308S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

8.1. Size:921K matsuki electric
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ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON) 60m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 70m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON) 100m @VGS=2.5V minimize

8.2. Size:830K matsuki electric
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ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8V mini

Другие MOSFET... ME2302 , ME2306A , ME2306A-G , ME2306D , ME2306D-G , ME2307 , ME2307-G , ME2308S , AON7506 , ME2309 , ME2309-G , ME2320D , ME2320D-G , ME2323D , ME2323D-G , ME2325 , ME2325-G .