All MOSFET. ME2308S-G Datasheet

 

ME2308S-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME2308S-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-23

 ME2308S-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME2308S-G Datasheet (PDF)

 ..1. Size:1540K  matsuki electric
 me2308s me2308s-g.pdf

ME2308S-G ME2308S-G

ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

 7.1. Size:850K  cn vbsemi
 me2308s.pdf

ME2308S-G ME2308S-G

ME2308Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

 8.1. Size:921K  matsuki electric
 me2308d me2308d-g.pdf

ME2308S-G ME2308S-G

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON)60m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)70m@VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)100m@VGS=2.5V minimize

 8.2. Size:830K  matsuki electric
 me2308dn-g.pdf

ME2308S-G ME2308S-G

ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD ProtectionGENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5Vtrench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8Vmini

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