ME4542-G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME4542-G datasheet

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ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 25m @VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON) 40m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 35m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially

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ME4548/ME4548-G Dual N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4548 is the dual N- and P-Channel logic enhancement RDS(ON) 18 m @VGS=10V (N-Ch) mode power field effect transistors are produced using high cell RDS(ON) 29 m @VGS=4.5V(N-Ch) density, DMOS trench technology. This high density process is RDS(ON) 22m @VGS=-10V(P-Ch) espe

Otros transistores... ME4411-G , ME4413D , ME4413D-G , ME4435 , ME4435-G , ME4454 , ME4454-G , ME4542 , AO4468 , ME4548 , ME4548-G , ME4565 , ME4565A , ME4565A-G , ME4565AD4 , ME4565AD4-G , ME45N03T .