All MOSFET. ME4542-G Datasheet

 

ME4542-G Datasheet and Replacement


   Type Designator: ME4542-G
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8
 

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ME4542-G Datasheet (PDF)

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 me4542 me4542-g.pdf pdf_icon

ME4542-G

ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON)40m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)35m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially

 9.1. Size:1677K  matsuki electric
 me4548 me4548-g.pdf pdf_icon

ME4542-G

ME4548/ME4548-G Dual N- and P-Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4548 is the dual N- and P-Channel logic enhancement RDS(ON) 18 m@VGS=10V (N-Ch)mode power field effect transistors are produced using high cell RDS(ON) 29 m@VGS=4.5V(N-Ch)density, DMOS trench technology. This high density process is RDS(ON) 22m@VGS=-10V(P-Ch)espe

Datasheet: ME4411-G , ME4413D , ME4413D-G , ME4435 , ME4435-G , ME4454 , ME4454-G , ME4542 , IRFP064N , ME4548 , ME4548-G , ME4565 , ME4565A , ME4565A-G , ME4565AD4 , ME4565AD4-G , ME45N03T .

History: HM60N04 | IPD70R1K4P7S | AOD456A | CS5210 | FIR6N40FG | ISL9N310AD3 | HAT1038R

Keywords - ME4542-G MOSFET datasheet

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