ME4970-G Todos los transistores

 

ME4970-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME4970-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOP-8
 

 Búsqueda de reemplazo de ME4970-G MOSFET

   - Selección ⓘ de transistores por parámetros

 

ME4970-G Datasheet (PDF)

 ..1. Size:1213K  matsuki electric
 me4970 me4970-g.pdf pdf_icon

ME4970-G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

 8.1. Size:1028K  1
 me4970 me4970g.pdf pdf_icon

ME4970-G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

 8.2. Size:1148K  matsuki electric
 me4970a me4970a-g.pdf pdf_icon

ME4970-G

ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=10V power field effect transistors are produced using high cell density, RDS(ON)20m@VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD

 8.3. Size:939K  cn vbsemi
 me4970.pdf pdf_icon

ME4970-G

ME4970www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D

MOSTRAR MÁS

Otros transistores... ME4825-G , ME4925 , ME4925-G , ME4946 , ME4946-G , ME4953-G , ME4954 , ME4954-G , IRFB4115 , ME50N06A , ME50N06A-G , ME50N06T , ME50N06T-G , ME50N75T , ME50N75T-G , ME50P06 , ME50P06-G .

History: R6010MNX | AP4407GS-HF | MCAC50N06Y-TP | YJP150N06AQ | IPI180N10N3 | ME66N04T | ME7170

 

 
Back to Top

 


 
.