ME4970-G MOSFET Datasheet: N-Ch, 30V, 10A. Full specification with pinout and replacement list

ME4970-G Specs and Replacement

Type Designator: ME4970-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SOP-8

ME4970-G substitution

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ME4970-G datasheet

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ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON) 16m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely ... See More ⇒

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me4970a me4970a-g.pdf pdf_icon

ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON) 14m @VGS=10V power field effect transistors are produced using high cell density, RDS(ON) 20m @VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD... See More ⇒

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ME4970 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S D ... See More ⇒

Detailed specifications: ME4825-G, ME4925, ME4925-G, ME4946, ME4946-G, ME4953-G, ME4954, ME4954-G, IRFB4115, ME50N06A, ME50N06A-G, ME50N06T, ME50N06T-G, ME50N75T, ME50N75T-G, ME50P06, ME50P06-G